| PART |
Description |
Maker |
| MJE18004D2 MJE18004D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation ...
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS
|
ON Semiconductor
|
| PI3USB103ZLE |
USB 2.0 High-Speed (480 Mbps) Signal Switch with Vbus Short Protection
|
Pericom Semiconductor C...
|
| TC1426CPA TC1427 TC1427CPA TC1428 TC1428COA TC1427 |
CSCA-A Series Hall-effect based, open-loop current sensor, Gallant connector, 600 A rms nominal, ±900 A range 1.2A的双路高速MOSFET驱动
1.2A Dual High-Speed MOSFET Drivers 1.2A的双路高速MOSFET驱动
The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. These devices are fabricated using an epitaxial layer to effectively short out the intrinsic parasitic
The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. ...
|
Microchip Technology, Inc.
MICROCHIP[Microchip Technology]
|
| MSM66P587TS-K MSMQ587 MSM586 MSM587 MSM66585 MSM66 |
Built-in 16 bit PWM and 8 bit A/D Converter, High-speed High-preformance 16 bit Microcontroller
|
OKI[OKI electronic componets]
|
| MSM66585 MSM66P587 MSM66Q587 |
Built-in 16 bit PWM and 8 bit A/D Converter, High-speed High-preformance 16 bit Microcontroller
|
OKI
|
| RJK0206DPA-00-J5A RJK0206DPA13 |
Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03E4DPA RJK03E4DPA13 RJK03E4DPA-00-J5A |
Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| R2J25953SP R2J25953SP-00-Q2 |
H-Bridge Control High Speed Power Switching with Built-in Driver IC and Power MOS FET
|
Renesas Electronics Corporation
|
| RJK03P0DPA RJK03P0DPA-00-J5A |
Built in SBD Dual N-channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03N7DPA |
30V, 35A, 4.4m max.Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03N2DPA |
30V, 40A, 4.0m max Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
